2N6660, vq1004j/p vishay siliconix document number: 70222 s-04379?rev. e, 16-jul-01 www.vishay.com 11-1 n-channel 60-v (d-s) single and quad mosfets
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) 2N6660 3 @ v gs = 10 v 0.8 to 2 1.1 vq1004j/p 60 3.5 @ v gs = 10 v 0.8 to 2.5 0.46
low on-resistance: 1.3 low threshold: 1.7 v low input capacitance: 35 pf fast switching speed: 8 ns low input and output leakage low offset voltage low-voltage operation easily driven without buffer high-speed circuits low error voltage direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems solid-state relays 1 2 3 to-205ad (to-39) top view d g s plastic: vq1004j sidebraze: vq1004p 1 2 3 4 5 6 7 14 13 12 11 10 9 8 top view dual-in-line d 1 d 4 s 1 s 4 g 1 g 4 nc nc g 2 g 3 s 2 s 3 d 2 d 3 n n n n 2N6660 device marking top view vq1004j ?s? fllxxyy ?s? = siliconix logo f = factory code ll = lot traceability xxyy = date code vq1004p ?s? fllxxyy device marking side view 2N6660 ?s? fllxxyy ?s? = siliconix logo f = factory code ll = lot traceability xxyy = date code
single total quad parameter symbol 2N6660 vq1004j vq1004p vq1004j/p unit drain-source voltage v ds 60 60 60 gate-source voltage v gs 20 30 20 v continuous drain current t c = 25 c 1.1 0.46 0.46 continuous drain current (t j = 150 c) t c = 100 c i d 0.8 0.26 0.26 a pulsed drain current a i dm 3 2 2 t c = 25 c 6.25 1.3 1.3 2 power dissipation t c = 100 c p d 2.5 0.52 0.52 0.8 w thermal resistance, junction-to-ambient b r thja 170 0.96 0.96 62.5 thermal resistance, junction-to-case r thjc 20 c/w operating junction and storage temperature range t j , t stg ?55 to 150 c notes a. pulse width limited by maximum junction temperature. b. this parameter not registered with jedec.
2N6660, vq1004j/p vishay siliconix www.vishay.com 11-2 document number: 70222 s-04379 ? rev. e, 16-jul-01
limits 2N6660 vq1004j/p parameter symbol test conditions typ a min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 75 60 60 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.7 0.8 2 0.8 2.5 v v ds = 0 v, v gs = 15 v 100 100 gate-body leakage i gss t c = 125 c 500 500 na v ds = 60 v, v gs = 0 v 10 v ds = 35 v, v gs = 0 v zero gate v ds = 48 v, v gs = 0 v 1 zero gate voltage drain current i dss t c = 125 c 500 500 a v ds = 28 v, v gs = 0 v t c = 125 c on-state drain current b i d(on) v ds = 10 v, v gs = 10 v 3 1.5 1.5 a v gs = 5 v, i d = 0.3 a d 2 5 5 drain-source on-resistance b r ds(on) v gs = 10 v, i d = 1 a 1.3 3 3.5 t c = 125 c d 2.4 4.2 4.9 forward transconductance b g fs v ds = 10 v, i d = 0.5 a 350 170 170 common source output conductance b g os v ds = 10 v, i d = 0.1 a 1 ms diode forward voltage v sd i s = 0.99 a, v gs = 0 v 0.8 v dynamic input capacitance c iss 35 50 60 output capacitance c oss v ds = 24 v, v gs = 0 v 25 40 50 reverse transfer capacitance c rss v ds = 24 v, v gs = 0 v f = 1 mhz 7 10 10 pf drain-source capacitance c ds 30 40 switching c turn-on time t on v dd = 25 v, r l = 23 8 10 10 turn-off time t off i d 1 a, v gen = 10 v r g = 25 8.5 10 10 ns notes a. for design aid only, not subject to production testing. vndq06 b. pulse test: pw 80 s duty cycle 1%. c. switching time is essentially independent of operating temperature. d. this parameter not registered with jedec on 2N6660.
2N6660, vq1004j/p vishay siliconix document number: 70222 s-04379 ? rev. e, 16-jul-01 www.vishay.com 11-3 ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs ? gate-source voltage (v) v gs ? gate-source voltage (v) v ds ? drain-to-source voltage (v) v ds ? drain-to-source voltage (v) i d ? drain current (a) t j ? junction temperature ( c) 2.0 v 100 0 0.4 0.8 1.2 1.6 2.0 80 60 40 20 0 2.8 v 2.6 v 2.4 v 2.2 v v gs = 10 v 2.0 0123 45 1.6 1.2 0.8 0.4 0 v gs = 10 v 8 v 7 v 6 v 5 v 4 v 3 v 2 v 1.0 0.8 0.6 0 02 10 0.4 0.2 468 125 c 25 c v ds = 15 v t j = ? 55 c 2.8 0 4 8 12 16 20 2.4 2.0 1.6 0 1.2 0.8 0.4 1.0 a 0.5 a i d = 0.1 a 2.5 2.0 1.5 0 0 0.4 2.0 1.0 0.5 0.8 1.2 1.6 v gs = 10 v 2.25 2.00 1.75 0.50 ? 50 ? 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v i d = 1.0 a 0.2 a 1.8 v i d ? drain current (a) i d ? drain current (ma) i d ? drain current (a) r ds(on) ? on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) r ds(on) ? drain-source on-resistance ( ? ) ( normalized)
2N6660, vq1004j/p vishay siliconix www.vishay.com 11-4 document number: 70222 s-04379 ? rev. e, 16-jul-01 threshold region capacitance gate charge load condition effects on switching normalized effective transient thermal impedance t 1 ? square wave pulse duration (sec) i d ? drain current (a) v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) q g ? total gate charge (pc) 10 1 0.01 0.5 0.1 1.0 1.5 2.0 v ds = 5 v 25 c ? 55 c 125 c t j = 150 c c oss 120 100 80 0 010 50 60 40 20 30 40 20 c iss c rss v gs = 0 v f = 1 mhz 15.0 12.5 10.0 0 0 100 600 7.5 5.0 200 300 400 2.5 500 i d = 1.0 a v ds = 30 v 48 v 0.1 1 10 100 10 1 50 20 5 2 v dd = 25 v r g = 25 v gs = 0 to 10 v t d(off) t r t d(on) t f 0.1 10 k 1.0 0.01 0.1 1.0 100 10 1 k normalized effective transient thermal impedance, junction-to-case (to-205ad) 1. duty cycle, d = 2. per unit base = r thjc = 20 c/w 3. t jm ? t c = p dm z thjc (t) t 1 t 2 t 1 notes: p dm t 2 duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05 0.01 i d ? drain current (ma) c ? capacitance (pf) v gs ? gate-to-source voltage (v) t ? switching time (ns)
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